View NDF05N50ZG_6598922.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? semiconductor components industries, llc, 2013 february, 2013 ? rev. 6 1 publication order number: ndf05n50z/d ndf05n50z, ndd05n50z n-channel power mosfet 500 v, 1.5 features ? low on resistance ? low gate charge ? esd diode ? protected gate ? 100% avalanche tested ? 100% rg tested ? these devices are pb ? free, halogen free/bfr free and are rohs compliant absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol ndf ndd unit drain ? to ? source voltage v dss 500 v continuous drain current r jc i d 5.5 (note 1) 4.7 a continuous drain current r jc , t a = 100 c i d 3.5 (note 1) 3 a pulsed drain current, v gs @ 10 v i dm 20 19 a power dissipation r jc p d 30 83 w gate ? to ? source voltage v gs 30 v single pulse avalanche energy, i d = 5.0 a e as 130 mj esd (hbm) (jesd22 ? a114) v esd 3000 v rms isolation voltage (t = 0.3 sec., r.h. 30%, t a = 25 c) (figure 17) v iso 4500 v peak diode recovery (note 2) dv/dt 4.5 v/ns continuous source current (body diode) i s 5 a maximum temperature for soldering leads t l 260 c operating junction and storage temperature range t j , t stg ? 55 to 150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. limited by maximum junction temperature 2. i s = 4.4 a, di/dt 100 a/ s, v dd bv dss , t j = +150 c http://onsemi.com v dss r ds(on) (max) @ 2.2 a 500 v 1.5 n ? channel g (1) d (2) s (3) NDF05N50ZG to ? 220fp case 221d ndd05n50zt4g dpak case 369aa 1 2 3 4 ndd05n50z ? 1g ipak case 369d 1 2 3 4 see detailed ordering, marking and shipping information in the package dimensions section on page 7 of this data sheet. ordering and marking information 1 2 3 1 2 3 ndf05n50zh to ? 220fp case 221ah
ndf05n50z, ndd05n50z http://onsemi.com 2 thermal resistance parameter symbol value unit junction ? to ? case (drain) ndf05n50z ndd05n50z r jc 4.2 1.5 c/w junction ? to ? ambient steady state (note 3) ndf05n50z (note 4) ndd05n50z (note 3) ndd05n50z ? 1 r ja 50 38 80 3. insertion mounted 4. surface mounted on fr4 board using 1 sq. pad size, (cu area = 1.127 in sq [2 oz] including traces). electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test conditions min typ max unit off characteristics drain ? to ? source breakdown voltage bv dss v gs = 0 v, i d = 1 ma 500 v breakdown voltage temperature coefficient bv dss / t j reference to 25 c, i d = 1 ma 0.6 v/ c drain ? to ? source leakage current i dss v ds = 500 v, v gs = 0 v 25 c 1 a 150 c 50 gate ? to ? source forward leakage i gss v gs = 20 v 10 a on characteristics (note 5) static drain ? to ? source on ? resistance r ds(on) v gs = 10 v, i d = 2.2 a 1.25 1.5 gate threshold voltage v gs(th) v ds = v gs , i d = 50 a 3.0 3.9 4.5 v forward transconductance g fs v ds = 15 v, i d = 2.5 a 3.5 s dynamic characteristics input capacitance (note 6) c iss v ds = 25 v, v gs = 0 v, f = 1.0 mhz 421 530 632 pf output capacitance (note 6) c oss 50 68 80 reverse transfer capacitance (note 6) c rss 8 15 25 total gate charge (note 6) q g v dd = 250 v, i d = 5 a, v gs = 10 v 9 18.5 28 nc gate ? to ? source charge (note 6) q gs 2 4 6 gate ? to ? drain (?miller?) charge (note 6) q gd 5 10 15 plateau voltage v gp 6.5 v gate resistance r g 1.5 4.5 8 resistive switching characteristics turn ? on delay time t d(on) v dd = 250 v, i d = 5 a, v gs = 10 v, r g = 5 11 ns rise time t r 15 turn ? off delay time t d(off) 24 fall time t f 14 source ? drain diode characteristics (t c = 25 c unless otherwise noted) diode forward voltage v sd i s = 5 a, v gs = 0 v 1.6 v reverse recovery time t rr v gs = 0 v, v dd = 30 v i s = 5 a, di/dt = 100 a/ s 255 ns reverse recovery charge q rr 1.25 c 5. pulse width 380 s, duty cycle 2%. 6. guaranteed by design.
ndf05n50z, ndd05n50z http://onsemi.com 3 typical characteristics 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v ds , drain ? to ? source voltage (v) i d , drain current (a) figure 1. on ? region characteristics 7.0 v v gs = 8 v to 10 v 6.5 v 6.0 v 5.5 v 5.0 v 0 5 10 15 20 25 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 345678910 v gs , gate ? to ? source voltage (v) i d , drain current (a) figure 2. transfer characteristics v ds = 25 v t j = 150 c t j = ? 55 c t j = 25 c 1.00 1.25 1.50 1.75 2.00 2.25 2.50 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 v gs , gate ? to ? source voltage (v) r ds(on) , drain ? to ? source resistance ( ) figure 3. on ? region versus gate ? to ? source voltage i d = 2.2 a t j = 25 c 1.000 1.250 1.500 1.750 2.000 2.250 2.500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v gs = 10 v t j = 25 c i d , drain current (a) figure 4. on ? resistance versus drain current and gate voltage r ds(on) , drain ? to ? source resistance ( ) 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 ? 50 ? 25 0 25 50 75 100 125 150 r ds(on) , drain ? to ? source resistance (normalized) i d = 2.2 a v gs = 10 v t j , junction temperature ( c) figure 5. on ? resistance variation with temperature 0.90 0.95 1.00 1.05 1.10 1.15 ? 50 ? 25 0 25 50 75 100 125 150 t j , junction temperature ( c) figure 6. bv dss variation with temperature bv dss , normalized breakdown voltage (v) i d = 1 ma
ndf05n50z, ndd05n50z http://onsemi.com 4 typical characteristics 0.1 1.0 10.0 0 50 100 150 200 250 300 350 400 450 500 v ds , drain ? to ? source voltage (v) i dss , leakage ( a) figure 7. drain ? to ? source leakage current versus voltage t j = 150 c 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 0 5 10 15 20 25 30 35 40 45 50 v ds , drain ? to ? source voltage (v) c, capacitance (pf) figure 8. capacitance variation t j = 25 c v gs = 0 v f = 1 mhz c iss c oss c rss 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 0 2 4 6 8 10 12 14 16 18 20 0 50 100 150 200 250 300 q g , total gate charge (nc) figure 9. gate ? to ? source voltage and drain ? to ? source voltage versus total charge v gs , gate ? to ? source voltage (v) v ds , drain ? to ? source voltage (v) q t q gd q gs v ds = 250 v i d = 5 a t j = 25 c v ds v gs 1.0 10 100 1000 1 10 100 r g , gate resistance ( ) t, time (ns) figure 10. resistive switching time variation versus gate resistance t d(off) t f t r t d(on) v dd = 250 v i d = 5 a v gs = 10 v 0.1 1.0 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 125 c t j = 150 c 25 c ? 55 c v sd , source ? to ? drain voltage (v) figure 11. diode forward voltage versus current i s , source current (a)
ndf05n50z, ndd05n50z http://onsemi.com 5 typical characteristics v ds , drain ? to ? source voltage (v) figure 12. maximum rated forward biased safe operating area ndf05n50z 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain ? to ? source voltage (v) i d , drain current (a) figure 13. maximum rated forward biased safe operating area ndd05n50z r ds(on) limit thermal limit package limit v gs 30 v single pulse t c = 25 c 10 s 100 s 10 ms dc 1 ms 0.01 0.1 1 10 100 0.1 1 10 100 1000 i d , drain current (a) r ds(on) limit thermal limit package limit v gs 30 v single pulse t c = 25 c 10 s 100 s 10 ms dc 1 ms figure 14. thermal impedance (junction ? to ? case) for ndf05n50z 0.01 0.1 1 10 1e ? 06 1e ? 05 1e ? 04 1e ? 03 1e ? 02 1e ? 01 1e+00 1e+01 1e+02 1e+03 pulse time (s) r(t) (c/w) figure 15. thermal impedance (junction ? to ? case) for ndd05n50z 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse r jc = 1.5 c/w steady state pulse time (s) 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse r(t) (c/w) r ja = 4.2 c/w steady state 1e ? 06 1e ? 05 1e ? 04 1e ? 03 1e ? 02 1e ? 01 1e+00 1e+01 1e+02 1e+03 0.01 0.1 1 10
ndf05n50z, ndd05n50z http://onsemi.com 6 typical characteristics pulse time (s) 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse r(t) (c/w) figure 16. thermal impedance (junction ? to ? ambient) for ndd05n50z r ja = 38 c/w steady state 1e ? 06 1e ? 05 1e ? 04 1e ? 03 1e ? 02 1e ? 01 1e+00 1e+01 1e+02 1e+0 3 0.01 0.1 1 10 100 leads heatsink 0.110 min figure 17. isolation test diagram measurement made between leads and heatsink with all leads shorted together. *for additional mounting information, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d.
ndf05n50z, ndd05n50z http://onsemi.com 7 ordering information order number package shipping ? NDF05N50ZG to ? 220fp (pb ? free, halogen ? free) 50 units / rail ndf05n50zh to ? 220fp (pb ? free, halogen ? free) 50 units / rail ndd05n50z ? 1g ipak (pb ? free, halogen ? free) 75 units / rail ndd05n50zt4g dpak (pb ? free, halogen ? free) 2500 / tape and reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. marking diagrams a = location code y = year ww = work week g, h = pb ? free, halogen ? free package NDF05N50ZG or ndf05n50zh ayww gate source drain 1 gate 2 drain 3 source 4 drain yww 5n 50zg 4 drain 2 drain 1 gate 3 source yww 5n 50zg to ? 220fp ipak dpak
ndf05n50z, ndd05n50z http://onsemi.com 8 package dimensions to ? 220 fullpak case 221d ? 03 issue k style 1: pin 1. gate 2. drain 3. source dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y
ndf05n50z, ndd05n50z http://onsemi.com 9 package dimensions to ? 220 fullpack, 3 ? lead case 221ah issue d dim min max millimeters d 14.70 15.30 e 9.70 10.30 a 4.30 4.70 b 0.54 0.84 p 3.00 3.40 e l1 --- 2.10 c 0.49 0.79 l 12.70 14.73 b2 1.10 1.40 q 2.80 3.20 a2 2.50 2.70 a1 2.50 2.90 h1 6.70 7.10 e q l1 b2 e d l p 123 b seating plane a a1 h1 a2 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour uncontrolled in this area. 4. dimensions d and e do not include mold flash and gate protrusions. mold flash and gate protrusions not to exceed 0.13 per side. these dimensions are to be measured at outermost extreme of the plastic body. 5. dimension b2 does not include dambar protrusion. lead width including protrusion shall not exceed 2.00. 2.54 bsc m 0.14 m a a b c e/2 m 0.25 m a b 3x c 3x b note 3
ndf05n50z, ndd05n50z http://onsemi.com 10 package dimensions style 2: pin 1. gate 2. drain 3. source 4. drain 123 4 v s a k ? t ? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? ipak case 369d issue c
ndf05n50z, ndd05n50z http://onsemi.com 11 package dimensions dpak (single gauge) case 369aa issue b style 2: pin 1. gate 2. drain 3. source 4. drain b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ndf05n50z/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

▲Up To Search▲

Price & Availability of NDF05N50ZG

	To Download NDF05N50ZG Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .